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Test for Analog IC

By Troy Graham,2014-11-17 11:40
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Test for Analog IC

Analog Integrated Circuits

    Name:

    一、Device Physics (30pts)

    1. In a p+n junction diode, if the reverse-biased voltage decreases, the depletion width

    decrease/increase/remain constant;

    2. In a pn junction diode, a high breakdown voltage is caused by

     The predominant breakdown

    mechanism in very highly doped diode is

    3. True or false: In a p++n junction (NA>>ND), the depletion capacitance is mostly determined

    by NA;

    4. As the forward-biased voltage of a p+n junction diode increases, the depletion capacitance

    decreases/increases/remain constant;

    5. What physical phenomenon do Early voltage effects describe (qualitatively, what happens

    to the device)?

6. The current gain β of an NPN BJT decrease/increase/remain constant with rising

    temperatures;

    7. True or False: The current gain β of an NPN BJT is dependent on both emitter injection

    efficiency and base-transport factor;

    8. Breakdown voltage BVCEO is less than/greater than /equal to BVCBO;

    9. If a MOS transistor is in the saturation region and its drain current exhibits a linear

    dependence with respect to gate-source voltage, what physical phenomenon is more than

    likely occurring?

Analog Integrated Circuits

    Name:

    How can a designer ensure a square-law behavior?

     (4pts)

    10. In what region of operation is the device shown below operating?

11. On the figure above, the effective threshold voltage decreases/increases/remains constant

    BS is increased from zero to 400 mV. when the bulk-source voltage V

    12. If a MOSFETs channel is only weakly inverted, its current is mainly due to

    drift/diffusion/neither.

    13. In the space provided, roughly sketch the value of capacitor Cgs as an NMOS device

    transitions from cut-off, through triode, on to saturation. (4pts)

Analog Integrated Circuits

    Name:

    二、Determine the output current and output resistance of the circuit shown in the figure.

    -15 15pts Assume βF200, Is510A, VA125V

    三、Determine the unloaded voltage gain and output resistance for the circuit of the figure. Neglect rµ; (15pts)

Analog Integrated Circuits

    Name:

    四、A BiCMOS amplifier is shown in the Figure. Calculate the small-signal gain . vo/vi

    ;16Assume , I10A , β100 , r0, VSFbA

    2 20pts μ0Cox200μA/V, Vt0.6V,and λ0

五、A BiCMOS Class AB output stage is shown in the figure. Device parameter are

     βF(npn)80,F(pnp)20, VBE(on)0.8v

    2 20pts μcox26μA/V, vt0.7V;0

    (a) Calculate bias currents in all devices for V0;

    (b) Calculate the positive and negative limits of V0 for RL=200Ω. Thus calculate the

    maximum average power that can be delivered to RL before clipping occurs for a

    sinusoidal input signal;.

Analog Integrated Circuits

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