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[doc] Power

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[doc] Power

    Power

J.Cent.SouthUniv.Techno1.(2009116:062l0628

    ;DoI:10.1O07/sl1771-009-0103-6

    Springer

    ;Powermanagementunitchipdesignfor

    ;automobileactive--matrixorganiclight--emittingdiodedisplaymodule KIMJH,PARKJH,KIMJH,CAOTV,LEETY’,

    ;BANHj2,

    ;YANGK2,

    ;KIMHG,HAPB,KIMYH

    ;(1.DepartmentofElectronicEngineering,ChangwonNationalUniversity,9Sarim-Dong,

    ;Changwon641773,Korea;

    ;2.DensoPSElectronicsCorporation,47Seongsan-Dong,Changwon641

    315,Korea)

    ;Abstract:Apowermanagementunit(PMU)chipsupplyingdualpanelsupplyvoltage,whichhasfllowelectro.magneticinterference

    ;(EMI)characteristicandisfavorableforminiaturization,isdesigned.Atwophasechargepumpcircuitusingextemalpumping

    ;capacitorincreasesitspumpingcurrentandworksoutthechargelossproble

mbyusingbulkpotentialbiasingcircuit.Alow’power

    ;startupcircuitisalsoproposedtoreducethepowerconsumptionoftheband

    gapreferencevoltagegenerator.Andtheringoscillator ;usedintheELVSSpowercircuitisdesignedwithlogicdevicesbysupplyingth

    elogicpowersupplytoreducethelayoutarea.The ;PMUchipisdesignedwithMagnaChip’s0.25gmhigh—voltageprocess.The

    drivingcurrentsofELVDDandELVSSaremorethan ;50mtAwhenaSPICEsimulationisdone.

    ;Keywords:DC-DCconverter;AMOLED;chargepumping;powermanagementunit(PMU);dualpanelsupplyvoltage

    ;lIntr0ducti0n

    ;ThefiatpaneldisplayfFPD)isusedinhand.held

    ;deviceslikePDAs(personaldigitalassistant),cellular ;phones.digita1camerasandmediaplayers.aswel1as ;automobileclustersf1].TFT_LCD(thinfilm

    ;transistor-liquidcrystaldisplay1isusedwidelyas ;automobileclusters.Recently,theOLED(organic ;lightemittingdiode)displayhasbeenexpanded

    ;incessantly.AMOLED(active.matrixOLED)is

    ;favorableformakingitultrathinandlow.masswith ;advantagesofwideviewingangle,excellentluminance, ;hipowerefficiency,andpaper-thinthickness[2].

    ;AM0LEDdisplaymoduleconsistsofdisplaypane1. ;displaydriverIC(integratedcircuit),andPMU(power ;managementunit)supplyingpowersuppliesforthepanel ;andthedisplaydriverIC.TheP?【Uchipsareclassified

    ;intoPMUchipswithsinglepanelsupplyvoltageand ;PMUchipswithdualpanelsupplyvoltage.ThePMU ;chipwithsinglepanelsupplyvoltageof1OVhasbeen ;alreadydeveloped31.AndtheresearchonthePMU

    ;chipwithdualpanelsupplyvoltageisgoingon ;nowadays.

    ;VBP(916V1andVCC(5V)areusedasinput

    ;voltages,andELVDD(5V)andELVSS(6V)areused

    ;aspane1drivingvoltages.VCI(2.8V)isusedforthe ;supplyvoltageofdriverIC,andVDDI(1.8V)isused ;fortheinterfaceasoutputvoltages.Therearefour ;voltageregulatorsforVCI,VDDI,VLP(2.8V),and ;ELVDDthatgenerateinternalsupplyvoltagesusedin ;thechipfromVBPof9to16VVLPisusedforasupply ;voltagetothe1eveldetectorandtheringoscillatorand ;ELVDDforasupplyvoltagetotheAMOLEDpane1. ;Andthereferencebiasgeneratorgeneratesreference ;voltagesforVLELVDD,ELVSS,VCI,andVDDI.

;SignalssuchasREFON,VLP0N,ELVDDON,

    ;ELVSS0N,VCION,andVDD10Nareusedfor

    ;turningonsequentiallythereferencebiasgenerator,the ;voltageregulators.andtheELVSSgenerator.ELVDDOf

    regulatingthe ;5Vcanbegeneratedeitherbylinearly

    ;vBPvoltage[4-5orbyusingabuckconverter[68

    ;thatisatypeofswitchingregulatonOntheotherhand, ;ELVSScanbegeneratedeitherbyusingabuck.boost ;convertersupplyinganegativevoltage[9]orbyusinga ;DCDCconverterofchargepumpingtype.Switching

    ;regulatorsofPWM(pulsewidthmodulation)typeusing ;inductorsarevulnerabletoEMI(electro.magnetic ;interference)radJationandnoise.andrealizethe ;limitationsinminiaturizationduetotheuseofdiscrete ;devicesincludingtheinductors.Andmanyresearcheson ;theDCDCconverterofpumpingtypehavebeendone ;formobiledevicesusingabatteryvoltageof3.7V l0-111.Foranautomobileclusterwithabatteryvoltage ;of12iustaresearchonapositivechargepump ;boostingVDDof10Vhasbeendone.Thereis.however, ;noresearchonaPMUchipsupplyingdualpanelsupply ;voltageincludinganegativevoltageOf6andbeing

;designedasonechip.

    ;APMUchipsupplyingELVDD,ELVSS,VCI,and

    ;VDDIforan8.382cmAMOLEDpanelusedasan

    ;automobileclusterisdesignedasonechiptominimize

    20;Accepteddate:2009——03——02 ;Receiveddate:2008——10

    ;Correspondingauthor:KIMYH,Professor,PhD;Tel:+8255285102

    3;Email

    ;622J.Cent.SouthUniv.Techno1.f2009)16:06210628

    ;thepowermoduleofthecluster.Atwo.phasecharge ;pumpcircuitusingexternalpumpingcapacitorISproposed ;toincreaseitspumpingcurrent.Abodypotentialbias

    ;circuit[12]isusedtoeliminatethechargelossproblem

    ;springingupinpumping[13],andasimplifiedcontrol ;clockswitchingbetween0VandVPPiSusedinthe ;proposedchargepumpcircuit.Alowpowerstartup

    ;circuitusedinthebandgapreference(BGR)voltage

    ;generatorisproposed.Amethodwiththelogicpower ;voltageVLPisusedintheELVSSpowercircuitto ;reducethelayoutsizeoftheringoscillator.APMUchiD ;supp~ingdualpanelpowervoltageisdesignedwith MagnaChip’S0.25gmhigh—voltageprocess.

    ;2Circuitdesign

    ;ThedesignedPMUchipconsistsofreferencebias ;generatorandvoltageregulatorthatsuppliesvoltages ;VBP

    ;VCC

    ;Fig.1BlockdiagramofPMUchip

    VPP’VCI,ELVDD.VLP,andVDDI,andDC—DC

    ;converterthatsuppliesvoltageELVSS.asshowninFig.1. ;VBPandVCCareusedasinputvoltages,andEIDD, ;ELVSS.VCI.andVDDIareusedasoutputvoltages. ;TherearefourvoltageregulatorsofVCI,VDDI,VL ;andEI?DD.whichgenerateinternalsupplyvoltages ;usedinthechipfromVBP0f9to16VVLPiSusedas ;thesupplyvoltageforthe1eveldetectorandthering ;oscillatorintheELVSSpowercircuit.Andthereference ;biasgeneratorgeneratesreferencevoltagesfor

    ;ELVDD,ELVSS,VCI,andVDDI.Signalssuchas

    ;REFON,VLPON,ELVDDON,ELVSSON,

    ;VC10N.andVDD10Nareusedforturningon

    ;sequentiallytherefe:rencebiasgenerator,thevoltage ;regulators.andtheELVSSgenerator.

    ;DrivingvoltageELVSSofan8.382cmAMOLED

    ;displaypanelrequiresadrivingvoltageof-6Vanda

;maximumdrivingcurrentofover50mA.Fig.2showsa

    ;Reference

    ;bias

    ;generator

    ;VC10N

    ------:=----_. ;IREFVCI

    ;__?--??-.-.-.______.;=______. ;VREFVCI

    ;------------?---??;:=----- ;ELVDD0N

    ;----------------?___--

    ;IREFELVDD

    ;VCI

    ;regulator

    ;ELVDD

    ;regulator

    ;VCI

    ;VREFL_—————_J ;ELVDDELVSSON ;----------------==---

    ;VP20ELVSS

;IRFFELVSS

    ;VREFELVSS

    ;IREFVLP

    ;i

    VREFVgI…Vbr.

    ;-----------

    ;==-----l

    ;lVLPl_?__-?-_--_-_=;;--?-----…Tn

    LPluau’

    !.———

    ;IREFVDDIIVDDI

    ;VREFVDDi[regulator

    ;ELVSS

    ;generator

    ;ELVDD

    ;ELVSS

    ;VDDI

    ;Fig.2SimplifiedblockdiagramofDCDCconverterofchargepumptype

    一一一一一一一一一一,

    ;J.Cent.SouthUniv.Techno1.(2009)16:06210628623 ;DC.DCconvertermeetingtherequirement.which

    ;consistsoftheBGRvoltagegenerator,theELVSSlevel

    ;detector,theringoscillator,thecontrolclocklogic.the ;prechargecircuit,andthesinglestagechargepump.Itis

    ;operatedsothattheoutputvoltageELVSSreachesthe ;targetvaluebyusingthenegativefeedbackmechanism. ;Chargepumpswithanexternalpumpingcapacitor ;areusuallybasedonHtreechargepumps[14],asshown

    ;inFig.3.Conventionalnegativechargepumpcircuit ;consistsofexternalpumpingcapacitorCPoflcharge ;reservoircapacitorCR,NMOS.channelmetaloxide ;semiconductor)transistorMN1matprechargesnodeN1 ;toGND(ground).inverterINVthatmakesnodeN,of ;thepumpingcapacitorswitchbetweenGNDandVIN. ;andchargeansferswitchMN,thattransfersnegative ;chargetoVOUTwhennodeN2switchesfromVBPto ;GNDandvoltageofnodeN1becomesVBPby

    ;capacitivecouplingofcapacitorCPWrllenCLKoisVBP, ;CLK0

    ;I......

    ;J

    ;CLKI

    ;I

    ;V0UT

;CLKI

    ;Fig.3ConventionalH?treenegativechargepumpcircuit ;prechargingtransistorMN1turnson,andvoltageofnode ;N1prechargestoGND.Afterthis.voltageofnodeN1 ;prechargestoGND.Afterthis.CLK0switchesfromVBP ;tOVOUTandsoMN1turnsoft.Atierthis,CLK1

    ;switchesfromVOUTtoVBPandvoltageofnodeN2 ;switchesfromVBPtoGND,sovoltageofnodeN1 ;becomesVBPfromGND.Then.ansistorMN,tUlTIS

    ;onandnegativechargeoftransistorN1istransferredto ;nodeVOU

    ;Incaseoftheconventionalchargepumpcircuit.the ;charge-lossproblemthatpartofpumpedchargedrains ;ofrtodeepNwelloccurssinceNPNBJT(bipolar

    ;junctiontransistor)parasitictotransistorMN2isinthe ;activeregionwhenvoltageofnodeN1switchesfrom ;GNDtoVBRAndCLK0andCLK.thatturn

    ;on/offtransistorsMN1andMN,areclocksignals ;switchingbetweenVBPandVOUT(=ELVSS).MN1 ;andMN2securelyturnofrwhenthelevelsofthese ;clocksareVOUT.

    ;TheproposedELVSSchargepumpcircuitusesfour

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