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Recent Development of RF-, Optical, Probe, Power, Bio-MEMS Technologies Changing Devices in 21 Century*SP=Special Session* Audio-Visual Equipment: Each ...


    Call for Papers

    Final Announcement



    Conference: September 26-28, 2001

    Short Course: September 25, 2001( in Japanese)

The 2001 International Conference on Solid State Devices

    and Materials (SSDM 2001) will be held on September

    26-28, 2001 at the Tokyo Diamond Hotel, Tokyo. Since

    1969, the conference has provided good opportunity to

    discuss key aspects of solid state devices and materials. For

    the 2001 conference, thirteen program sub-committees have

    been organized for covering circuits and system areas as

    well as device and material areas. A new strategic session on

    organic semiconductor devices and materials, a special

    session on a variety of MEMS, and a rump session on

    nano-bio technologies are to be included in this years

    program. In addition, half-day short courses are scheduled

    prior to the conference, which offers tutorial lectures on

    important areas.

Original and unpublished papers will be accepted after

    being reviewed by the Program Committee. Several

    invited speakers will overview topics of current interest.

    Advance Program will appear in July. On-line information

    about SSDM 2001 is available on the Web Site:

     Web Site:



    Plenary Speakers:

    "Nanotechnology Strategy and Grand Challenges in U.S."

     M.C. Roco (NSF)

    "WebTop Collaboration and Semiconductor Industry"

     S. Kohyama (Toshiba)


    For the 2001 conference, thirteen program sub-committees have been organized in order to bring higher quality paper selection and strengthen the specific technology areas. The scope of each subcommittee is listed below.


     [1] Advanced Silicon Circuits and Systems

     (Chair, T. Shibata, Univ. of Tokyo)

     Papers bridging the gap between the material/device technologies and system technologies for enhancing the total system performance are solicited in the following areas (but not limited): (1) New concept circuits, (2) Advanced architecture and systems, (3) Advanced digital/analog circuits and systems, (4) Low power technologies, (5) Functional devices and their circuit applications, (6) New materials for advanced circuits, (7) Bio-inspired circuits and systems, (8) Imaging and image processing systems, (9) New non-silicon circuits that cooperate with or outperform silicon.

Invited Speakers:

    "Low Power Technologies for High Performance Systems"

     T. Kuroda (Keio Univ.)

    "Bio-Inspired VLSI Based on Analog/Digital Merged Technology"

     A. Iwata, T. Morie and M. Nagata (Hiroshima Univ.)

     [2] Advanced Silicon Devices and Device Physics

     (Chair, S. Kawamura, Fujitsu Ltd.)


     The scope of this subcommittee covers all aspects of advanced silicon devices, such as (1) Sub-100nm silicon

    CMOS devices including logic, memory and merged

    logic/memory, (2) New concepts, theories and

    breakthroughs in silicon-related devices, (3) Post-CMOS

    silicon device structure, and (4) Physics for advanced

    processes/devices including simulation and modeling.

Invited Speakers:

    "Sub-50nm CMOS with SALVO (Self-Aligned

    Local-Channel MOSFETs by SALVO Process"

    C.-P. Chang, H.-H. Voung, M.R. Baker, C.S. Pai,

    F.P. Klemens, J.F. Miner, S.N. Rogers, W.W. Tai, M. Bude,

    E.J. Lloyd, M. Frei, W.M. Mansfield, A. Kornblit,

    J.T.-C. Lee and C.S. Rafferty (Agere Systems)

    "Device Physics of Sub-100nm Transistors"

     M. Lundstrom (Purdue University)

     [3] Silicon Process / Materials Technologies

     (Chair, T. Kikkawa, Hiroshima Univ.)

     The scope is to bring together new and/or advanced technologies for silicon ULSI fabrication processes and

    materials. Papers are solicited in, but not limited to, the following areas: (1) New processes and materials for

    Si-ULSI fabrication, (2) Improved processes and materials technologies for sub-130 nm devices including wafer-size

    Cu metallization processes.

Invited Speakers:

    "Recent Progress in High-k Dielectric Films for ULSIs"

     S.-I. Lee (Samsung Electronics)

     [4] New Materials and Characterization

     (Chair, S. Zaima, Nagoya Univ.)

     Papers are solicited in subject are including: (1) Characterization and processing of group-IV semiconductors, high- and low-k dielectrics, ferroelectrics, and other new materials, including diamond, nano-tubes and fullerene, (2) Physics and chemistry of surface and interface phenomena

    (including oxidation and nitridation), (3) Reliability physics and failure Analysis of gate oxides and interconnect systems, (4) In-situ monitoring and Nanometer-scale characterization, but not limited to these subjects. Submission of papers in a germinal stage is also encouraged.


Invited Speakers:

    "MRAM Materials and Devices"

     W.J. Gallagher (IBM)

    "High-Special-Resolution Microanalysis Using Micorcalorimeter EDS "

     S. W. Nam (NIST)

     [5] Compound Semiconductor Materials and Devices

     (Chair, Y. Horikoshi, Waseda Univ.)

     Basic technology for III-V, II-VI and other compound semiconductors including wide-gap semiconductors and magnetic semiconductors. "Compound Semiconductor Materials and Devices" covers the following areas (but not limited); (1) Growth and characterization, (2) Hetero-structures and superlattices, (3) Devices, device processing and reliability

    Invited Speakers:

    "HBTs and HEMT Based on InGaP/GaAs Heterostructures"

     T. Kikkawa (Fujitsu Labs.)

    "Electric Field Control of Ferromagnetism in Semiconductors"

     H. Ohno (Tohoku Univ.)

    "Growth and Characteristics of AlGaN/GaN HBTs"

     R.D. Dupuis, D.J.H. Lambert, U. Chowdhury, M.M. Wong,

     T.G. Zhu and B.S. Shelton (Univ. of Texas, Austin) "Application of InAs Free-Standing Membranes for Electromechanical Devices"

     H. Yamaguchi, R. Drayfus, S. Miyashita* and

     Y. Hirayama (NTT and *NTT-AT)

    "Materials Design for the Development of ZnO-Based Devices"

     T. Yamamoto (Kouchi Univ. of Technol.)

    "Present and Future Nitride-Based Devices"

     H. Amano and I. Akasaki (Meijo Univ.)

     [6] Optoelectronic Devices and Packaging

     (Chair, Y. Nakano, Univ. of Tokyo)

     The scope of this subcommittee covers all aspects of active, passive, and integrated photonic devices, including (1) laser diodes, LEDs, photo-detectors, SOAs, and OEICs, (2) optical modulators, switches, and MEMS, (3) optical wavelength converters and nonlinear optical devices, (4) passive waveguide components and PLCs, (5) hybrid and monolithic integration, (6) epitaxial growth and wafer processing technologies, and (7) packaging and interconnection of optoelectronic devices.


Invited Speakers:

    "Optical Switch Based on Thermocapillarity"

     T. Sakata, M. Makihara, H. Togo, F. Shimokawa

     and K. Kaneko (NTT)

    "Integrated Light Sources for 40Gbit/s and Beyond"

     H. Takeuchi and Y. Akage (NTT)

    "Progress of Long Wavelength VCSEL Research"

     M.C. Amann and M. Orsiefer (Technical Univ. of Munich) "Strategies for Ultra-Wide Band Optical Amplifier Development"

     S. Namiki (Furukawa Electric)

     [7] Novel Devices , Physics, & Fabrication

     (Chair, K. Matsumoto, ETL)

     The topics covered in this session are: (1) Single electron devices and their application, theory and experiment. (2) Compound semiconductor devices with new structures, materials, and physics. (3) Carbon nanotube devices and their physics. (4) Molecular electronics and devices, (5) Spin electronics and devices. (6) Resonant tunneling devices and their application to circuits. (7) Other novel devices such as quantum computing devices, superconducting devices, etc. Fabrication and characterization of quantum

    nano-structures for electron devices are also solicited.

    Invited Speakers:

    "Extraordinary Magnetoresistance: New Physics with Practical Applications"

     S.A. Solin (NEC Res. Inst.)

    "Imaging Coherent Electron Flow"

     R.M. Westervelt (Harbard Univ.)

    "Nanometer-Scale Characterization by Scanning Tunneling Microscopy"

     G. Meyer (Paul Drude Inst. for Solid State Electronics)


     [8] Silicon-on-Insulator Technologies

     (Chair, M. Yoshimi, Toshiba)

     SOI technology is gaining the status of mainstream technology for next-generation high-performance LSIs. It is also expected that miniaturization capability of SOI will exceed that of bulk Si devices. The topics of "SOI Technology" session cover (1) Circuit Technology and LSI Applications (Low Power/Low Voltage, High Speed, RF, Analog/Linear, etc), (2) New Device Structures Using SOI


    and Their Processes, (3) Device Manufacturing Issues (Isolation, Silicidation, Plasma Damage, etc), (4) Physics and Modeling of SOI Device/Process and Circuits (floating-body effect, self-heating, etc), (5) SOI Materials Characterization and Manufacturing, (6) Reliability Issues (Hot Carrier Injection, GOI, Radiation Effects), etc..

    Invited Speakers:

    "Low Voltage SOI Circuit Technology"

     T. Douseki (NTT)

    "SOI Technology for MPU Applications"

     M.A. Mendicino (Motorola, Digital DNA Labs.)

    "Future of SOI Devices"

     J.-P. Colinge (Univ. of California)

[9] Non-Volatile Memory Technologies

     (Chair, K.Takasaki, Fujitsu Lab.)

     "Non-volatile Memories" session solicits all NV memory (Flash, FeRAM, EPROM, EEPROM, Anti-fuse, MRAM & others) technology related papers. Topics relating to NV devices include cell device physics & characterization, processing & materials, tunnel dielectrics, ferroelectric materials, reliability, failure analysis quality assurance & testing, modeling & simulation, integrated circuits, new concept technologies, and new applications & systems (solid state disks, memory cards, programmable logic,---).

Invited Speakers:

    "Multi-Level Flash Memory Technology"

     A. Modelli, A. Visconti and R. Bez (ST Microelectronics) "Future Si-Dot Type NVM Technology"

     J. de Blauwe (Agere Systems)

    "Key Issues for Manufacturable FeRAM Devices"

     T. Yamazaki (Fujitsu Ltd.)

    [10] SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications

     (Chair, Y. Itoh, Mitsubishi Electric)

     The scope of this subcommittee covers recent advances in SiGe/III-V/III-N device (but not limited) and circuit design technologies for modern wireless and optical

    communications, providing open discussions on device and circuit design issues for next generation ICs.

Invited Speakers:


    "RF Power Performance of AlGaN/GaN HJFETs on Sapphire Substrate"

     N. Hayama, K. Kunihiro, Y. Okamoto, K. Kasahara,

    T. Nakayama, Y. Ohno, K. Matsunaga, H. Miyamoto,

    Y. Ando and M. Kuzuhara (NEC)

    "InP HBT Device technologies for Ultra High-Speed Optical Communication ICs"

     T. Tanoue (Hitachi)

     [11] Quantum Nanostructures/Devices/Physics

     (Chair, Y. Arakawa, Univ. of Tokyo)

     The field covers recent progress in nanostructures such as quantum wires and dots, including (1) growth and processing (2) transport/optical properties and THz/Femto-second dynamics of nanostructures (3)

    nanometer-scale characterization such as STM and SNOM (4) electronic devices and optical devices based on quantum phenomena (5) novel nanostructures related to photonic crystals, magnetic materials, superconductors, insulators, and metals.

Invited Speakers:

    "Direct formation of GaAs/AlGaAs Quantum Dots by Droplet Epitaxy"

     N. Koguchi (National Res. Inst. for Metals)

    "Quantum Dot Intersubband Devices"

     P. Bhattacharya and S. Krishna (Univ. of Michigan) "Quantum Ratchet"

     P. Omling (Univ. of Lund)

    "Two-Dimensional Friedel Oscillations and Electron Confinement to Nanostructures at a Semiconductor Surface"

     K. Kanisawa (NTT)

[12] System-Level Integration and Packaging Technologies

     (Chair, A. Matsuzawa, Matsushita Electric)

     The scope is to bring advanced packaging or integration technologies which contribute to the higher performance system-level integration. Papers are solicited in the area, but not limited to: high density integration and packaging technologies, three dimensional integration technologies, total design and CAD technologies including EMI or EMC management, micro-process and micro-connection

    technologies, micro component technologies, high frequency and ultra-high speed data transfer technologies, module testing technologies, burn-in and KGD (Known Good Die) technologies, and heat sinking technologies.


Invited Speakers:

    "Issues of Current LSI Technology and an Expectation for New System-Level Integration"

     T. Sakurai (Univ. of Tokyo)

    "Current Activities and Future Plan for New Integration Technologies in ITRI and Taiwan "

     C.-T. Chang (ERSO/ITRI)

     [13] Organic Semiconductor Devices and Materials

     (Chair, Y. Ohmori, Osaka Univ.)

     Electronic processes in organic materials and practical device application in the following fields (but not limited): (1) Organic LED and transistors (2) Photovoltaic and Optical devices (3) Sensors (4) Fabrication and characterization of organic thin films (5) Electrical and optical properties of organic thin film and materials (6) Organic-inorganic hybrid systems (7) Interfacial phenomena, etc.

Invited Speakers: "Organic Solid State Lasers"

     J.H. Schoen (Bell-Labs)

    "Electron Tunneling Devices using Organic Ultra-thin Films and Specific Dielectric Property of Organic Monolayers"

     M. Iwamoto (Tokyo Inst. of Technol.)

    "Conjugated Polymer Thin Film Transistor Circuits" H. Sirringhaus (Univ. of Cambridge)


    "Recent Development of RF-, Optical, Probe, Power, Bio-MEMS Technologies Changing Devices in 21 Century" Organizers: M. Esashi (Tohoku Univ.), Y. Aoyagi (Tokyo Inst. of Technol.) and Y. Horiike (Univ. of Tokyo)

     Invited Speakers:

    "Uncooled Focal Plane Arrays Using Micromachining Technology"

     M. Kimata (Mitsubishi Electric) "Micromachined Multi-probe Array for High Density Data Storage"

     T. Ono and M. Esashi (Tohoku Univ.)

    "RF MEMS for Low-Power Communications" C. T. -C. Nguyen (Univ. of Michigan)

    "Electrostatically levitated Inertia Measurement Systems (Ball MEMS and Rotational Gyroscope) " R.Toda*, N..Takeda*, T.Murakoshi**, S.Nakamura**,

    and M.Esashi*** (*Ball Semiconductor, **Tokimec,

    and ***Tohoku Univ.) RUMP SESSIONS


Two rump sessions "Next Generation ULSI: Challenge and

Breakthrough" and "What Innovation Can We Expect by

    Fusion of Nano-Technology and Bio-Technology?" are planned to be held on September 27 (Thursday). The detail of the rump sessions will be announced in the Advance Program.


    Two Short courses will be held on September 25 (Tuesday) for young engineers and students. All lectures are given in Japanese. SUBMISSION OF PAPERS

    Prospective authors must submit camera-ready papers, 2 pages in length with all figures and tables.

    Paper Deadline is May 14, 2001.

    The 2-page paper must be written in English and typed on 8.5×11 inches or A4-size white bond paper. The first page

    must include the title of the paper, author(s), affiliation(s), address, telephone number, fax number, e-mail address, and article text. The second page should be used for indicating figures, tables and photographs. Detailed format information will be available at the conference World Wide Web site. The paper should report original and previously unpublished work, including specific results.

    Original 2-page manuscript, 15 copies of printed or

    photocopied on both sides of a sheet with attached

    author's application form and copyright form should be

    sent to SSDM 2001 Secretariat.

    Authors must specify the area at which the paper should be presented. Papers to be presented at the conference will be selected by each subcommittee on the basis of the suggested areas and the content of the submitted paper.

    Authors of accepted papers would be notified by mail until the middle of July and will be requested to give either an oral presentation conforming to a 15-20 minute format or a poster presentation. Each conference-room will be provided with overhead projectors (O.H.P.) for oral presentations.

    Secretariat of SSDM

    c/o Business Center for Academic Societies Japan

    5-16-9 Honkomagome, Bunkyo-ku, Tokyo 113-8622, Japan

    Phone: 81-3-5814-5800 FAX: 81-3-5814-5823




    Accepted papers will be printed without opportunity for further change in the extended abstracts, which will be distributed on the opening day of the Conference. Authors of papers accepted for SSDM 2001 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics. The special issue will be published in April, 2002.


    Submission of an abstract for review and subsequent acceptance is considered by the committee as an agreement that the work will not be published by the author prior to the presentation at the conference. This policy will be enforced by automatic withdrawal of the paper by the conference committee.


    Late news papers describing important new developments may be submitted. A two-page description must be sent in the camera-ready format as required for the regular papers. The accepted papers will be included in the Extended Abstracts.

    Original 2-page manuscript, 5 copies of printed or photocopied on both sides of a sheet with attached author's application form and copyright form should

    be sent to SSDM 2001 Secretariat.

Late News Paper Deadline is July 31, 2001.

    Notice of acceptance will be mailed by the middle of August.


    The conference has been organized to provide as much interaction and discussion among the participants as possible. The program will include a plenary session along with technical sessions comprised of invited and contributed papers for oral or poster presentation.


    "SSDM Awards'' will be given to excellent papers

    presented in the previous conferences.

    SSDM Award

    for the paper outstandingly contributed to the field of


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